Specification
| Item | Single-crystal diamond substrate |
| Diameter | 10 x 10mm |
| Thickness | 100μm、300μm、500μm |
| Surface Finish | Double side polished |
| Surface Orientation | <100> |
| Crystal Growth Method | MPCVD |
| Polish roughness | 1~10nm |
| Thermal Conductivity | 1500-2300W/m.K |
Customization specifications：
* Various sizes and shapes such as 5*5mm,10*10mm,1~4inch.
* Various thicknesses: 0.1~5mm
* Various surface roughness such as slicing,lapping.
* crystal type:single crystal diamond or polycrystalline diamond.
Properties
| Single-crystal diamond substrate | |
| Crystal Structure | Cubic Crystal |
| Band Gap (eV) | 5.47 eV |
| Melting Point (°C) | 4027 °C |
| Mohs Hardness | 10 |
| Thermal Conductivity (W·cm⁻¹·°C⁻¹) | 20 |
| Thermal Expansion Coefficient (°C⁻¹) | 0.8 × 10⁻⁶ |
| Lattice Constant (nm) | 0.3567 nm |
| Electron Mobility (cm²·V⁻¹·s⁻¹) | 1600 |
| Breakdown Electric Field (MV·cm⁻¹) | 10 |
| JFM Index (Power) | 5330 |
| BFM Index (SW) | 14860 |
| BHFM Index (RF) | 1080 |
| Refractive Index | 2.417 |
