Home/ Products / CVD Diamond Substrate / Polycrystalline Diamond Substrate
Specification
Item Polycrystalline Diamond Substrate
Diameter 50.8mm
Thickness 300mm
Surface Finish Double side polished
Surface Orientation N/A
Crystal Growth Method MPCVD
Polish roughness 1~10nm
Thermal Conductivity >1000 W/m.K


Customization specifications:

* Various sizes and shapes such as 5*5mm,10*10mm,1~4inch.

* Various thicknesses:0.1~5mm.

* Various surface roughness such as slicing,lapping.

* crystal type:single crystal diamond or polycrystalline diamond.


Properties
Polycrystalline Diamond Substrate
Crystal Structure Cubic Crystal
Band Gap (eV) 5.47 eV
Melting Point (°C) 4027 °C
Mohs Hardness 10
Thermal Conductivity (W·cm⁻¹·°C⁻¹) 20
Thermal Expansion Coefficient (°C⁻¹) 0.8 × 10⁻⁶
Lattice Constant (nm) 0.3567 nm
Electron Mobility (cm²·V⁻¹·s⁻¹) 1600
Breakdown Electric Field 10
JFM Index (Power) 5330
BFM Index (SW) 14860
BHFM Index (RF) 1080
Refractive Index 2.417
SKU: --
2 inch CVD Polycrystalline Diamond Substrate
Surface
  • DSP
Thickness
  • 300μm
Pieces
  • 1pcs
Stock: 999999
Quantity
$2,000.00

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DESCRIPTION
Our 2 inch CVD polycrystalline diamond substrates are grown by MPCVD technology, featuring ultra-high thermal conductivity, excellent chemical inertness and extreme mechanical hardness. Available with lapped or CMP polished surfaces. Suitable for high-power GaN device heat spreaders, laser optics, epitaxy experiments and semiconductor thermal management. Custom thickness, surface finish and edge processing are supported.
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