Specification
| Item | Silicon Substrate | |
| Diameter | 50.8±0.3mm | |
| Thickness | 400±25μm、1000±25μm、3000±25μm | 100±25μm、400±25μm |
| Surface Finish | Single side polished | Double side polished |
| Surface Orientation | <100> | |
| Crystal Growth Method | CZ | |
| Dopant | N-type (Si-doping/As-doping/Sb-doping) | |
| Primary Flat Length | 16±1.0mm | |
| Resistivity | 1~100Ω·cm / <0.01Ω·cm | |
| TTV | ≤8μm | |
| BOW | ≤10μm | |
| WARP | ≤12μm | |
| Edge Exclusion | ≤2 mm | |
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various surface roughness such as slicing,lapping,polishing.
* Silicon crystal ingots are available.
Properties
| Silicon Substrate | |
| Growth Method | CZ/FZ |
| Crystal Structure | Diamond |
| Lattice Constant(nm) | a=5.4305Å |
| Density(g/cm3) | 2.329 |
| Melting point | 1410°C |
| Mohs Hardness(mohs) | 7 |
| Dielectric Constant | 11.8 |
| Band Gap(eV) | 1.1 |
| Breakdown Electrical Field ((MV/cm)) | 0.3 |
| Thermal Conductivity(n-type) (W/cm.K) | 1.48 |
| Electron Mobility(cm2·V-1·s-1) | 1480 |
| Thermal Expansion | 2.6×10^-6 /°C |
| Refractive Index | 3.5 |
