Specification
| Item | Silicon Substrate |
| Diameter | 50.8±0.3mm |
| Thickness | 400±25μm |
| Oxide layer thickness | 300nm |
| Surface Finish | SSP Single-sided oxide / DSP Double-sided oxide |
| Surface Orientation | <100> |
| Crystal Growth Method | CZ |
| Dopant | N-type / P-type |
| Primary Flat Length | 16±1.0mm |
| Resistivity | 1~100Ω·cm/<0.01Ω·cm |
| TTV | ≤8μm |
| BOW | ≤10μm |
| WARP | ≤12μm |
| Edge Exclusion | ≤2 mm |
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various surface roughness such as slicing,lapping,polishing.
* Silicon crystal ingots are available.
Properties
| Silicon Substrate | |
| Crystal Structure | Diamond cubic crystal |
| Band-gap Width (eV) | 1.12 eV |
| Melting Point (°C) | 1414 °C |
| Mohs Hardness | 7 |
| Thermal Conductivity (W·cm⁻¹·°C⁻¹) | 1.5 W·cm⁻¹·°C⁻¹ |
| Thermal Expansion Coefficient (°C⁻¹) | 2.5×10⁻⁶ |
| Lattice Constant (nm) | a=0.5431 |
| Electron Mobility (cm²·V⁻¹·s⁻¹) | 1350 |
| Breakdown Electric Field (MV·cm⁻¹) | 0.3 |
| JFM Index (power) | 1 |
| BFM Index (SW) | 1 |
| BHFM Index (RF) | 1 |
| Refractive Index | 3.5 |
