Specification
Top Silicon layer
| Thickness | 220±10nm |
| Surface Orientation | <100> |
| Crystal Growth Method | CZ |
| Dopant | N-type / P-type |
Buried oxider
| Thickness | 2000±50 nm |
Handle Substrate
| Diameter | 200.0±0.3mm |
| Thickness | >300μm |
| Surface Orientation | <100> |
| Crystal Growth Method | CZ |
| Dopant | N-type / P-type |
| Primary Flat Length | Notch |
| Resistivity | 1~100Ω·cm/<0.01Ω·cm |
| Backside Surface | Polished+Oxide |
| TTV | ≤5μm |
| BOW | ≤50μm |
| WARP | ≤50μm |
| Edge Exclusion | ≤3 mm |
Customization specifications：
* Various sizes and shapes such as 10*10mm
* Various thicknesses: 0.1~20mm
* Various surface roughness such as slicing,lapping,polishing.
* Silicon crystal ingots are available.
