Our 6‑inch SOI (Silicon‑On‑Insulator) wafers are high‑quality three‑layer substrates. The thin top monocrystalline silicon device layer is electrically isolated from handle wafer via buried oxide (BOX) layer. Custom options: top‑silicon thickness, BOX layer thickness, crystal orientation <100>/<111>, resistivity, P‑type / N‑type doping. PD‑SOI and FD‑SOI configurations are available. Thanks to low parasitic capacitance, complete latch‑up immunity, low crosstalk and excellent radiation hardness, these 6‑inch SOI wafers fit for pilot‑scale MEMS sensor fabrication, RF circuit development, mixed‑signal chips and industrial semiconductor research. Custom dicing service is supported. Send your target specs for precise quotation.